2SK1835 Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Body to Drain Diode Reverse
Recovery Time
5000
2000
1000
500
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
200
100
5
0.1 0.2
0.5 1
2
5 10
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs. Drain
to Source Voltage
Ciss
1000
100
V_GS = 0
f = 1 MHz
Coss
Crss
10
0
10
20
30
40
50
Drain to Source Voltage V_DS
Dynamic Input Characteristics
1000
20
I_D =4A
800
600
V _DS
400
V _GS
V _DD = 600 V
400 V
250 V
200
V_DD = 600 V
400 V
250 V
0
40
80
120
160
Gate Charge Qg (nc)
16
12
8
4
0
200
Switching Characteristics
1000
500
td (off)
200
100
tf
50
tr
td (on)
20 V_GS = 10 V, duty 1 %
PW = 5 µs
10
0.05 0.1 0.2
0.5 1
2
5
Drain Current I_D (A)
6