2SK1835 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (V_DSS = 1500V)
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator
Outline and Equivalent Circuit
TO-3P
D
G
1
2
3 _{1. Gate}
2. Drain
(Flange)
S
3. Source