2SK1835 Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
25
Pulse Test
20
3A
15
10
2A
5
ID = 1 A
0
4
8
12
16
20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
25
Pulse Test
20 _{VGS = 15 V}
15
I_D= 3 A
10
2A
1A
5
0
–40
0
40
80
120
160
Case Temperature T_C (°C)
2SK1835
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Forward Transfer Admittance
vs. Drain Current
10
5 _{Pulse Test}
VDS = 20 V
2
1
0.5
Tc = –25°C
25°C
75°C
0.2
0.1
0.05 0.1 0.2
0.5 1
2
5
Drain Current I_D (A)
5