2SK1835 Datasheet, PDF(3/10 Page) Hitachi Semiconductor

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2SK1835 Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1835

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Drain to source breakdown

voltage

V(BR)DSS

1500 â

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

4.6

resistance

Forward transfer admittance |yfs|

0.9 1.4

Max

Â±1

500

4.0

7.0

Input capacitance

Ciss

Output capacitance

Coss â

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note 1. Pulse Test

1700 â

230 â

100 â

230 â

0.85 â

2500 â

Unit

ÂµA

â¦

Test Conditions

ID = 10 mA, VGS = 0

VGS = Â±20 V, VDS = 0

VDS = 1200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A

VGS = 15 V*1

ID = 2 A

VDS = 20V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2A

VGS = 10 V

RL = 15 â¦

IF = 4 A, VGS = 0

IF = 4 A, VGS = 0,

diF / dt = 100 A / Âµs

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