2SK1835 Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1835
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
5
10 V
8V
Pulse Test
4
6V
3
5V
2
1
V _GS = 4 V
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
30
10
3
1
0.3
DC
PW
Operatio=n
Operation in this
area is ilmited by
1(T0cm=s2(51°sCh)ot)
R _DS (on)
0.1
Ta = 25°C
0.05
10 30 100 300 1000
3000 10000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 20 V
4 _{Pulse Test}
Tc = –25°C
25°C
75°C
3
2
1
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4