2SK1772 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1772
Body-Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs
V_GS = 0
200 Ta = 25°C
100
50
20
10
5
0.02 0.05 0.1 0.2 0.5 1.0 2.0
Reverse Drain Current I _DR (A)
Dynamic Input Characteristics
50
20
I_D = 1 A
V_GS
40
V_DD = 5 V
16
10 V
30
20 V
12
20 ^VDS
8
10
VDD= 5 V
4
10V
20 V
0
0
0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nc)
1000
Typical Capacitance vs. Drain to
Source Voltage
100
Ciss
Coss
Crss
10
V_GS = 0
f = 1 MHz
1
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD= 30 V
200
PW = 2 µs
duty ≤ 1 %
100
tf
50
td(off)
20
tr
td(on)
10
5
0.02 0.05 0.1 0.2 0.5 1.0 2.0
Drain Current I _D (A)
6