2SK1772 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1772
Power vs. Temparature Derating
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
10 V _{4 V} ^{3.5 V}
5V
1.6
Pulse test
1.2
3.0 V
0.8
2.5 V
0.4
V_GS = 2 V
0
1
2
3
4
5
Drain to Source Voltage V DS (V)
Maximum Safe Operation Area
10
Operation in this area is
limited by RDS(on)
3
PW = 100 µs
1
0.3
0.1
DC
PW
=
Operation
PW
=1
10 _ms
ms
0.03
0.01 ^{Ta = 25°C}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
1.0
V_DS = 10 V
Pulse test
0.8
0.6
75°C
0.4
Tc = 25°C
–25°C
0.2
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
4