2SK1772 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1772
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
30
Gate to source voltage
V_GSS
±20
Drain current
I_D
1
Drain peak current
I *1
D(pulse)
2
Body to drain diode reverse drain current
I _DR
1
Channel dissipation
Pch*²
1
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)
3. Marking is "HY".
Unit
V
V
A
A
A
W
°C
°C
2