2SK1772 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1772
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V_(BR)DSS
30
—
voltage
Gate to source breakdown
voltage
V_(BR)GSS
±20
—
Gate to source leak current I_GSS
—
—
Zero gate voltage drain current I_DSS
—
—
Gate to source cutoff voltage V_GS(off)
1.0
—
Static drain to source on state R_DS(on)
—
0.4
resistance
—
0.6
Forward transfer admittance |y_fs|
0.6 1.0
Input capacitance
Ciss
—
85
Output capacitance
Coss —
65
Reverse transfer capacitance Crss
—
20
Turn-on delay time
t _d(on)
Rise time
t_r
Turn-off delay time
t _d(off)
Fall time
t_f
Body to drain diode forward V_DF
voltage
—
10
—
15
—
40
—
30
—
1.2
Body to drain diode reverse t_rr
recovery time
—
30
Note 1. Pulse Test
Max Unit
—
V
—
V
±10 µA
50
µA
2.0 V
0.6 Ω
0.85 Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 25 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 0.5 A
V_GS = 10 V*¹
I_D = 0.5 A
V_GS = 4 V*¹
I_D = 0.5 A
V_DS = 10 V*¹
V_DS = 10 V
V_GS = 0
f = 1 MHz
I_D = 0.5 A
V_GS = 10 V
R_L = 60 Ω
I_F = 1 A, V_GS = 0
I_F = 1 A, V_GS = 0,
di_F/dt = 50 A/µs
3