2SK1772 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse test
1.6
1.2
2A
0.8
1A
0.4
I _D= 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
2SK1772
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse test
5
2
1
VGS = 4 V
0.5
10 V
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I D (A)
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse test
1.6
1.2
2A
0.8 _{VGS = 4 V}
0.4
1A
0.5 A
2A
V_GS = 10 V
I _D= 0.5 A, 1 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
5.0
–25°C
2.0
Tc = 25°C
1.0
0.5
75°C
0.2
0.1
0.05
0.02
VDS = 10 V
Pulse test
0.05 0.1 0.2 0.5 1.0 2.0
Drain Current I _D (A)
5