2SK168 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

2SK168
Input and Output Admittance
vs. Frequency
5
y_is = g_is+jb_is
2
y_os = g_os+jb_os
V_DS = 5 V
1.0 ^{ID = 10 mA}
g_is
b_is×10
b_os×10
0.5
g_os
0.2
0.1
0.05
50
100
200
500
Frequency f (MHz)
Input and Output Admittance
vs. Drain Current
5
b_os
2
g_is
1.0
b_is×10
0.5
0.2 ^{VDS = 5 V}
f = 100 MHz
y_is = g_is+jb_is
y_os = g_os+jb_os
0.1
g_os is Negligible
Small at This Frequency
0.05
0.5 1.0 2
5 10 20 50
Drain Current I_D (mA)
Transfer Admittance vs.
Frequency
50
V_DS = 5 V
I_D = 10 mA
20
g_fs
10
5
–b_fs
–10 b_rs
2 ^yfs ^{= g}fs^+jbfs
y_rs = g_rs+jb_fs
1.0
10 g_rs
0.5
50
100
200
500
Frequency f (MHz)
Transfer Admittance vs.
Drain Current
50
V_DS = 5 V
20
f = 100 MHz
10
5
g_fs
–b_fs
–100 b_rs
2
100 g_rs
1.0
y_fs = g_fs+jb_fs
y_rs = g_rs+jb_rs
0.5
0.5 1.0 2
5 10 20 50
Drain Current I_D (mA)
6