2SK168 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

2SK168
Absolute Maximum Ratings (Ta = 25°C)
Item
Gate to drain voltage
Gate to source voltage
Gate current
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_GDO
V_GSS
I_G
I_D
Pch
Tch
Tstg
Ratings
Unit
–30
V
–1
V
10
mA
20
mA
200
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Gate to drain breakdown
voltage
V_(BR)GDO
–30
—
Gate cutoff current
I _GSS
—
—
Drain current
I
*¹
DSS
4
—
Gate to source cutoff voltage V_GS(off)
—
—
Forward transfer admittance |y_fs|
8
10
Input capacitance
Ciss
—
6.8
Reverse transfer capacitance Crss
—
0.1
Power gain
PG
—
27
Noise figure
NF
—
1.7
Note: 1. The 2SK168 is grouped by I_DSS as follows.
D
E
F
4 to 8
6 to 12
10 to 20
Max Unit
—
V
–10 nA
20
mA
–3.0 V
—
mS
—
pF
—
pF
—
dB
—
dB
Test conditions
I_G = –100 µA, I_S = 0
V_GS = –0.5 V, V_DS = 0
V_DS = 5 V, V_GS = 0
V_DS = 5 V, I_D = 10 µA
V_DS = 5 V, V_GS = 0, f = 1 kHz
V_DS = 5 V, V_GS = 0, f = 1 MHz
V_DS = 5 V, V_GS = 0, f = 1 MHz
V_DS = 5 V, V_GS = 0,
f = 100 MHz
V_DS = 5 V, V_GS = 0,
f = 100 MHz
2