2SK168 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

Maximum Channel Power
Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
10
V_GS = 0
8
–0.2 V
6
–0.4
4
–0.6
2
–0.8
–1.0
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
2SK168
Typical Output Characteristics (1)
10
V_GS = 0
8
6
–0.2 V
Pch _{= 200 mW}
–0.4
4
–0.6
2
–0.8
–1.0
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
15
V_DS = 5 V
10
F
5
E
D
0
–3.0
–2.0
–1.0
0
Gate to Source Voltage V_GS (V)
3