2SK168 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

Output Capacitance vs.
Drain to Source Voltage
200
100
V_GS = 0
f = 1 MHz
50
20
10
5
2
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage V_DS (V)
Power Gain vs. Drain Current
30
E
F
D
20
10
V_DS = 5 V
f = 100 MHz
V_GS Variable
0
2 4 6 8 10 12 14 16
Drain Current I_D (mA)
2SK168
Power Gain vs.
Drain to Source Voltage
30
20
V_GS = 0
f = 100 MHz
10
0
5
10
15
Drain to Source Voltage V_DS (V)
Noise Figure vs.
Drain to Source Voltage
8
V_GS = 0
f = 100 MHz
6
4
2
0
4
8
12
16
Drain to Source Voltage V_DS (V)
5