2SK168 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

2SK168
Forward Transfer Admittance vs.
Drain to Source Voltage
15
Ta = –25°C
25°C
10
75°C
5
V_GS = 0
f = 1 kHz
0
5
10
15
Drain to Source Voltage V_DS (V)
Input Capacitance vs.
Drain to Source Voltage
20
V_GS = 0
f = 1 MHz
10
5
2
0.1 0.2 0.5 1.0 2
5 10
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1.0
0.5
0.2
V_DS = 5 V
f = 1 kHz
0.5 1.0 2
5 10 20
Drain Current I_D (mA)
Reverse Transfer Capacitance vs.
Drain to Source Voltage
5
V_GS = 0
2
f = 1 MHz
1.0
0.5
0.2
0.1
0.05
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage V_DS (V)
4