HN58C256A Datasheet, PDF (5/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

HN58C256A Series, HN58C257A Series
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
Input voltage
Operating temperature
V_CC
V_SS
V_IL
V_IH
V_H * ³
Topr
4.5
5.0
0
0
–0.3*¹
—
2.2
—
V_CC – 0.5 —
0
—
Notes: 1. V_IL min: –1.0 V for pulse width ≤ 50 ns.
2. V_IH max: V_CC + 1.0 V for pulse width ≤ 50 ns.
3. This function is supported by only the HN58C257A series.
Max
Unit
5.5
V
0
V
0.8
V
V_CC + 0.3*² V
V_CC + 1.0 V
70
°C
DC Characteristics (Ta = 0 to +70°C, V_CC = 5.0 V±10%)
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Operating V_CC current
Symbol Min
I _LI
—
I _LO
—
I _CC1
—
I _CC2
—
I _CC3
—
—
Typ
Max
—
2*¹
—
2
—
20
—
1
—
12
—
30
Output low voltage
V_OL
—
—
0.4
Output high voltage
V_OH
2.4
—
—
Note: 1. I_LI on RES = 100 µA max (only the HN58C257A series)
Unit
µA
µA
µA
mA
mA
mA
V
V
Test conditions
V_CC = 5.5 V, Vin = 5.5 V
V_CC = 5.5 V, Vout = 5.5/0.4 V
CE = V_CC
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at V_CC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns at V_CC = 5.5 V
I_OL = 2.1 mA
I_OH = –400 µA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*¹
Cin
—
—
6
Output capacitance*¹
Cout
—
—
12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
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