HN58C256A Datasheet, PDF (4/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

HN58C256A Series, HN58C257A Series
Operation Table
Operation
CE
OE
WE
RES*³
Read
Standby
V_IL
V_IL
V_IH
V_H * ¹
V_IH
×*²
×
×
Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write inhibit
×
×
V_IH
×
×
V_IL
×
×
Data polling
V_IL
V_IL
V_IH
V_H
Program reset
×
×
×
V_IL
Notes: 1. Refer to the recommended DC operating condition.
2. × : Don’t care
3. This function is supported by only the HN58C257A series.
RDY/Busy*³
High-Z
High-Z
High-Z to V_OL
High-Z
—
—
V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z
—
—
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Power supply voltage rerative to V_SS
Input voltage rerative to V_SS
Operationg temperature range*²
V_CC
Vin
Topr
–0.6 to +7.0
–0.5*¹ to +7.0*³
0 to +70
Storage temperature range
Tstg
–55 to +125
Notes: 1. Vin min = –3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
3. Should not exceed V_CC + 1 V.
Unit
V
V
°C
°C
4