HN58C256A Datasheet, PDF (1/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

HN58C256A Series
HN58C257A Series
256k EEPROM (32-kword × 8-bit)
Ready/Busy and RES function (HN58C257A)
ADE-203-410D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as
32768-word × 8-bit. They have realized high speed low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
• Single 5 V supply: 5 V ±10%
• Access time: 85 ns/100 ns (max)
• Power dissipation
 Active: 20 mW/MHz, (typ)
 Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Ready/Busy (only the HN58C257A series)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 10⁵ erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin (only the HN58C257A series)
• Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.