2SC2613 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Base to Emitter Saturation Voltage
vs. Collector Current
10
3
I_C = 5 I_B
T_C = 25°C
1.0
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I_C (A)
2SC2613
Switching Time vs. Collector Current
10
3
t_stg
1.0
0.3
t_f
t_on
0.1
0.03
I_C =
V_CC
5=..
I_B1 = –5
150 V
I_B2
0.01
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I_C (A)
Switching Time vs. Case Temperature
5
2
1.0
0.5
0.2
0.1
0.05
0
t_stg
t_f
t_on
I_C = 5 A
I_B1 = –I_B2 =1 A
VR_CLC^{==.3. 015Ω}0 V
25 50 75 100 125
Case temperature T_C (°C)
5