2SC2613 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC2613
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
I _C(peak)
I_B
P_C * ¹
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
Unit
500
V
400
V
7
V
5
A
10
A
2.5
A
40
W
150
°C
–55 to +150
°C