2SC2613 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Collector Current Derating Rate
100
80
60
IS/B _{Limit Area}
40
20
0
50
100
150
Case temperature T_C (°C)
Reverse Bias Area of Safe Operation
10
325 V, 10 A
8
6
400 V, 5 A
4
2
I_B2 = –1.0 A
450 V, 1.0 A
0
0 100 200 300 400 500
Collector to emitter Voltage V_CE (V)
2SC2613
Transient Thermal Resistance
10
3
10 ^{ms–10 s}
1.0
0.3
10 ^{µs–10 ms}
0.1
0.03
0.01
0.01
0.01
T_C = 25°C
0.1
1.0
10 (s)
0.1
1.0
Time t
10 (ms)
Collector to Emitter Voltage
vs. Base to Emitter Resistance
600
I_C = 1 mA
500
400
300
100
1k
10 k 100 k 1 M
Base to emitter resistance R_BE (Ω)
3