2SC2613 Datasheet, PDF(2/7 Page) Hitachi Semiconductor

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2SC2613 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

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2SC2613

Electrical Characteristics (Ta = 25Â°C)

Item

Collector to emitter sustain

voltage

Symbol Min

VCEO(sus)

400

VCEX(sus)

400

Typ

Emitter to base breakdown

V(BR)EBO

voltage

Collector cutoff current

I CBO

I CEO

DC current transfer ratio

hFE1

hFE2

Collector to emitter saturation VCE(sat)

voltage

Base to emitter saturation

VBE(sat)

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

t on

t stg

1.2

Max Unit

100 ÂµA

1.0 V

1.5 V

1.0 Âµs

2.5 Âµs

1.0 Âµs

Test conditions

IC = 0.2 A, RBE = â,

L = 100 mH

IC = 5 A, IB1 = âIB2 = 1 A

VBE = â5 V, L = 180 ÂµH,

Clamped

IE = 10 mA, IC = 0

VCB = 400 V, IE = 0

VCE = 350 V, RBE = â

VCE = 5 V, IC = 2.5 A*1

VCE = 5 V, IC = 5 A*1

IC = 2.5 A, IB = 0.5 A*1

IC = 5 A, IB1 = âIB2 = 1 A,

VCC â 150 V

Maximum Collector Dissipation Curve

100

150

Case Temperature TC (Â°C)

Area of Safe Operation

100

iC (peak)

IC (max)

(Continuous)

1.0

0.1

Ta = 25Â°C, 1 Shot

0.01

1 3 10 30 100 300 1,000

Collector to emitter Voltage VCE (V)

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