2SC2613 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC2613
Typical Output Characteristics
5
0.5
0.4
4
0.3
0.2
3
0.1
2
0.05 A
1
T_C = 25°C
I_B = 0
0
1
2
3
4
5
Collector to emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
100
75°C
25°C
30
T_C ^{= –25°C}
10
3
1
0.01
V_CE = 5 V
0.03 0.1 0.3 1.0 3 10
Collector current I_C (A)
Typical Transfer Characteristics
5
4
T_C = 25°C
V_CE = 5 V
3
2
1
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
Collector to Emitter Saturation
Voltage vs. Base Current
10
3
2A
1.0
0.3
1A
0.1
0.03
I_C = 0.5 A
0.01
0.01 0.03 0.1 0.3
T_C = 25°C
1.0 3 10
Base current I_B (A)
4