S11510_10 Datasheet, PDF (6/8 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

CCD image sensors
S11510 series
Timing chart (line binning)
Integration time
Vertical binning period
(shutter has to be open) (shutter has to be closed)
Readout period
(shutter has to be closed)
P1V
P2V, TG
P1H
Tpwv
1
3...69 70←64 + 6 (bevel)
2
Tovr
Tpwh, Tpws Tovrh
4...1043 1044: S11510-1006
4...2067 2068: S11510-1106
1
2
3
P2H
P3H
P4H, SG
RG
Tpwr
OS
D1
D2
D19 D20
D3...D10, S1...S1024, D11...D20: S11510-1006
S1...S2048
: S11510-1106
KMPDC0355EA
Parameter
P1V, P2V, TG
Pulse width*¹⁰
Rise and fall time*¹⁰
Pulse width*¹⁰
P1H, P2H, P3H, P4H
Rise and fall time*¹⁰
Pulse overlap time
Duty ratio*¹⁰
Pulse width*¹⁰
SG
Rise and fall time*¹⁰
Pulse overlap time
Duty ratio*¹⁰
RG
Pulse width
Rise and fall time
TG-P1H
Overlap time
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
Tovrh
-
Tpws
Tprs, Tpfs
Tovrh
-
Tpwr
Tprr, Tpfr
Tovr
Min.
6
20
1000
10
500
40
1000
10
500
40
100
5
1
*10: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.
Typ.
8
-
2000
-
1000
50
2000
-
1000
50
1000
-
2
Max.
Unit
-
μs
-
ns
-
ns
-
ns
-
ns
60
%
-
ns
-
ns
-
ns
60
%
-
ns
-
ns
-
μs
6