S11510_10 Datasheet, PDF (4/8 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

CCD image sensors
S11510 series
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Saturation output voltage
Vsat
-
Fw × Sv
-
Full well capacity
Vertical
Horizontal
Fw
50
250
60
300
-
-
CCD node sensitivity
Dark current*⁵
Readout noise*⁶
Dynamic range*⁷
Line binning
Sv
5.5
6.5
7.5
DS
-
50
200
Nr
-
6
15
DR
41700
50000
-
Spectral response range
Photo response non-uniformity*⁸
λ
PRNU
-
200 to 1100
-
-
±3
±10
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: Temperature: -40 °C, readout frequency: 20 kHz
*7: Dynamic range (DR) = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
Fixed pattern noise (peak to peak)
Photo response non-uniformity =
× 100 [%]
Signal
Unit
V
ke^-
μV/e^-
e^-/pixel/s
e^- rms
-
nm
%
Dark current vs. temperature
100
(Typ.)
10
1
0.1
0.01
-50 -40 -30 -20 -10 0 10 20 30
Temperature (°C)
KMPDB0304EA
Window material
Type no.
S11510 series
*9: Resin sealing
Window material
Quartz glass*⁹
Spectral transmittance characteristic of window material
(Typ. Ta=25 °C)
100
90
80
70
60
50
40
30
20
10
0
100 200 300 400 500 600 700 800 900 100011001200
Wavelength (nm)
KMPDB0303EA
4