S11510_10 Datasheet, PDF (2/8 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

CCD image sensors
S11510 series
Selection guide
Type no.
S11510-1006
S11510-1106
Number of
total pixels
1044 × 70
2068 × 70
Number of active
pixels
1024 × 64
2048 × 64
Active area
[mm (H) × mm (V)]
14.336 × 0.896
28.672 × 0.896
Readout speed
max.
(MHz)
0.5
Applicable
driver circuit
C11287
General ratings
Parameter
Pixel size
Vertical clock phase
Horizontal clock phase
Output circuit
Package
Window
Specification
14 (H) × 14 (V) μm
2-phase
4-phase
One-stage MOSFET source follower
24-pin ceramic DIP (refer to dimensional outline)
Quartz glass
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature*²
Storage temperature
Output transistor drain voltage
Reset drain voltage
Over flow drain voltage
Vertical input source voltage
Horizontal input source voltage
Over flow gate voltage
Vertical input gate voltage
Horizontal input gate voltage
Summing gate voltage
Output gate voltage
Reset gate voltage
Transfer gate voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
*2: Package temperature
Symbol
Min.
Typ.
Max.
Unit
Topr
-50
-
+50
°C
Tstg
-50
-
+70
°C
VOD
-0.5
-
+30
V
VRD
-0.5
-
+18
V
VOFD
-0.5
-
+18
V
VISV
-0.5
-
+18
V
VISH
-0.5
-
+18
V
VOFG
-10
-
+15
V
VIG1V, VIG2V
-10
-
+15
V
VIG1H, VIG2H
-10
-
+15
V
VSG
-10
-
+15
V
VOG
-10
-
+15
V
VRG
-10
-
+15
V
VTG
-10
-
+15
V
VP1V, VP2V
-10
-
+15
V
VP1H, VP2H
VP3H, VP4H
-10
-
+15
V
2