S11510_10 Datasheet, PDF (1/8 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

IR-enhanced CCD image sensors
S11510 series
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the
near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a
MEMS structure on the back side of the CCD. This allows the S11510 series to have much higher sensitivity than our previ-
ous products (S10420-01 series).
In addition to having high infrared sensitivity, the S11510 series can be used as an image sensor with a long active area in
the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning op-
eration also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add
signals digitally.
The S11510 series has a pixel size of 14 × 14 μm and is available in two image areas of 14.336 (H) × 0.896 (V) mm (1024
× 64 pixels) and 28.672 (H) × 0.896 (V) mm (2048 × 64 pixels). The S11510 series is pin compatible with the S10420-01
series, and so operates under the same drive conditions.
Features
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
High CCD node sensitivity: 6.5 μV/e-
High full well capacity and wide dynamic range
(with anti-blooming function)
Pixel size: 14 × 14 μm
MPP operation
Applications
Raman spectrometers, etc.
Spectral response (without window)*¹
100
(Typ. Ta=25 °C)
90
S11510 series
80
70
60
Conventional type
50
(S10420-01 series)
40
30
20
10
0
200
Front-illuminated CCD
400
600
800
1000
1200
Wavelength (nm)
KMPDB0324EC
*1: Spectral response with quartz glass is decreased according to
the spectral transmittance characteristic of window material.
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