S11510_10 Datasheet, PDF (3/8 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

CCD image sensors
S11510 series
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Over flow drain voltage
Over flow gate voltage
Output gate voltage
Substrate voltage
Input source
Test point
Vertical input gate
Horizontal input gate
Vertical shift register clock voltage
High
Low
Horizontal shift register clock voltage
High
Low
Summing gate voltage
Reset gate voltage
Transfer gate voltage
External load resistance
High
Low
High
Low
High
Low
Symbol
VOD
VRD
VOFD
VOFG
VOG
VSS
VISV, VISH
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP3HH, VP4HH
VP1HL, VP2HL
VP3HL, VP4HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
RL
Min.
23
11
11
0
4
-
-
-9
-9
4
-9
4
-6
4
-6
4
-6
4
-9
90
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Signal output frequency
fc
-
Vertical shift register
capacitance
-1006
-1106
-
CP1V, CP2V
-
Horizontal shift register
capacitance
-1006
-1106
CP1H, CP2H
-
CP3H, CP4H
-
Summing gate capacitance
CSG
-
Reset gate capacitance
CRG
-
-1006
Transfer gate capacitance _-1106
Charge transfer efficiency*³
-
CTG
-
CTE
0.99995
DC output level
Vout
17
Output impedance
Power consumption*⁴
Zo
-
P
-
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity
*4: Power consumption of the on-chip amplifier plus load resistance
Typ.
Max.
Unit
24
25
V
12
13
V
12
13
V
12
13
V
5
6
V
0
-
V
VRD
-
V
-8
-
V
-8
-
V
6
8
-8
-7
V
6
8
V
-5
-4
6
8
-5
-4
V
6
8
-5
-4
V
6
8
-8
-7
V
100
110
kΩ
Typ.
0.25
600
1200
80
160
10
10
30
60
0.99999
18
10
4
Max.
Unit
0.5
MHz
-
pF
-
-
pF
-
-
pF
-
pF
-
-
pF
-
-
19
V
-
kΩ
-
mW
3