GS78132AB Datasheet, PDF (8/12 Pages) GSI Technology – 256K x 32 8Mb Asynchronous SRAM

Address
OE
CE
BA, BB,
BC, BD
WE
Data In
Data Out
Address
OE
CE
BA, BB,
BC, BD
WE
Data In
Data Out
Write Cycle 1: WE Controlled
tWC
tAW
tWR
tCW
tBW
tAS
tWP
tWHZ
tDW tDH
Data valid
tWLZ
High impedance
Write Cycle 2: CE Controlled
tWC
tAW
tAS
tCW
tWR1
tBW
tWP
tDW tDH
Data valid
High impedance
GS78132AB
Rev: 1.04 5/2006
8/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology