GS78132AB Datasheet, PDF (3/12 Pages) GSI Technology – 256K x 32 8Mb Asynchronous SRAM

GS78132AB
Truth Table
CE OE WE BA BB BC BD DQA1–A8
H X X XXX X
LLL L
HL L L
L L H LHL L
LLHL
LLLH
LLL L
HL L L
L X L LHL L
LLHL
LLLH
L H H XXX X
L X X HHH H
X: “H” or “L”
Not Selected
Read
High Z
Read
Read
Read
Write
High Z
Write
Write
Write
High Z
High Z
DQB1–B8
Not Selected
Read
Read
High Z
Read
Read
Write
Write
High Z
Write
Write
High Z
High Z
DQC1–C8
Not Selected
Read
Read
Read
High Z
Read
Write
Write
Write
High Z
Write
High Z
High Z
DQD1–D8
Not Selected
Read
Read
Read
Read
High Z
Write
Write
Write
Write
High
High Z
High Z
Supply
Current
ISB1, ISB2
IDD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
V_DD
V_IN
V_OUT
PD
T_STG
–0.5 to +4.6
V
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
–0.5 to V_DD +0.5
V
(≤ 4.6 V max.)
1.5
W
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.04 5/2006
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology