GS78132AB Datasheet, PDF (4/12 Pages) GSI Technology – 256K x 32 8Mb Asynchronous SRAM

GS78132AB
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Supply Voltage for -8/10/12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
V_DD
3.0
3.3
3.6
V_IH
2.0
—
V_DD +0.3
V_IL
–0.3
—
0.8
T_Ac
0
—
70
T_Ai
–40
—
85
Notes:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Input Capacitance
Output Capacitance
C_IN
C_OUT
Notes:
1. Tested at T_A = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested
Test Condition
Max
V_IN = 0 V
10
V_OUT = 0 V
7
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Symbol
I_IL
Output Leakage Current
I_OL
Output High Voltage
V_OH
Output Low Voltage
V_OL
Test Conditions
V_IN = 0 to V_DD
Output High Z,
V_OUT = 0 to V_DD
I_OH = –4 mA
I_OL = +4 mA
Min
–2 uA
–1 uA
2.4
Unit
V
V
V
o_C
o_C
Unit
pF
pF
Max
2 uA
1 uA
0.4 V
Rev: 1.04 5/2006
4/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology