GS8182Q36BGD-167 Datasheet, PDF (7/36 Pages) GSI Technology – 18Mb SigmaQuad-IITM Burst of 2 SRAM

GS8182Q08/09/18/36BD-333/300/250/200/167/133
Background
Separate I/O SRAMs, from a system architecture point of view, are attractive in applications where alternating reads and writes are
needed. Therefore, the SigmaQuad-II SRAM interface and truth table are optimized for alternating reads and writes. Separate I/O
SRAMs are unpopular in applications where multiple reads or multiple writes are needed because burst read or write transfers from
Separate I/O SRAMs can cut the RAM’s bandwidth in half.
SigmaQuad-II B2 SRAM DDR Read
The read port samples the status of the Address Input and R pins at each rising edge of K. A low on the Read Enable-bar pin, R,
begins a read cycle. Data can be clocked out after the next rising edge of K with a rising edge of C (or by K if C and C are tied
high), and after the following rising edge of K with a rising edge of C (or by K if C and C are tied high). Clocking in a high on the
Read Enable-bar pin, R, begins a read port deselect cycle.
SigmaQuad-II B2 Double Data Rate SRAM Read First
Read A
NOP
Write B
Read C Write D
Read E Write F
Read G Write H
K
K
Address
A
R
W
BWx
D
C
C
Q
CQ
CQ
B
C
D
E
F
G
H
B
B+1
D
D+1
F
F+1
H
H+1
B
B+1
D
D+1
F
F+1
H
H+1
A
A+1
C
C+1
E
Rev: 1.03d 11/2011
7/36
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2007, GSI Technology