GS74116A Datasheet, PDF (5/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

GS74116ATP/J/X
Power Supply Currents
Parameter Symbol
Test Conditions
Operating
Supply
IDD
Current
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
Standby
Current
ISB1
CE ≥ VIH
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
Standby
Current
CE ≥ VDD – 0.2V
ISB2
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
0 to 70°C
–40 to 85°C
Unit
7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns
150 130 105 90 160 140 115 100 mA
40 30 25 25 50 40 35 35 mA
10
20
mA
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
VIH = 2.4 V
VIL = 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
Output Load 1
DQ
50Ω 30pF¹
VT = 1.4 V
Output Load 2
3.3 V
DQ
589Ω
5pF^{1 434Ω}
Rev: 1.03 10/2002
5/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.