GS74116A Datasheet, PDF (4/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

GS74116ATP/J/X
Recommended Operating Conditions
Parameter
Symbol Min
Supply Voltage for -7/-8/-10/-12
V_DD
3.0
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
–0.3
Ambient Temperature,
Commercial Range
TAc
0
Ambient Temperature,
Industrial Range
TAI
–40
Typ
Max
Unit
3.3
3.6
V
—
V_DD +0.3
V
—
0.8
V
—
70
o_C
—
85
o_C
Note:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
Output Leakage
Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4 mA
ILO = +4 mA
– 1 uA
–1 uA
2.4
—
1 uA
1 uA
—
0.4 V
Rev: 1.03 10/2002
4/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.