GS71208TP Datasheet, PDF (3/11 Pages) GSI Technology – 128K x 8 1Mb Asynchronous SRAM

GS71208TP
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
Output Voltage
VOUT
Allowable power dissipation
PD
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
0.7
W
Storage temperature
TSTG
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V_DD
VIH
VIL
TAc
TAI
Min
3.135
2.0
–0.3
0
–40
Typ
Max
Unit
3.3
3.6
V
—
V_DD +0.3
V
—
0.8
V
—
70
o_C
—
85
o_C
Note:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Rev: 1.03 10/2001
3/11
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.