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GS81314PT18 Datasheet, PDF (27/40 Pages) GSI Technology – 144Mb SigmaDDR-IVe™ Burst of 2 Single-Bank ECCRAM™ | |||
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GS81314PT18/36GK-133/120/106
Output Electrical Characteristics
Parameter
Symbol
Min
Typ
DC Output High Voltage
VOHdc
â
VDDQ
DC Output Low Voltage
VOLdc
-0.15
0.40 * VDDQ
AC Output High Voltage
VOHac
â
VDDQ
AC Output Low Voltage
VOLac
-0.25
0.40 * VDDQ
Note:
1. âTypâ parameter applies when SRAM ROUTL = 40ï and Controller RINH = 60ï.
2. Parameters apply to: CQ, CQ, DQ, DQINV, QVLD.
Max
VDDQ + 0.15
â
VDDQ + 0.25
â
Leakage Currents
Parameter
Symbol
Min
Max
ILI1
-2
2
Input Leakage Current
ILI2
-20
2
ILI3
-2
20
Output Leakage Current
ILO
-2
2
Notes:
1. VIN = VSS to VDDQ.
2. Parameters apply to CK, CK, KD, KD, SA, DQ, DQINV, LD, R/W, MRW when ODT is disabled.ï
Parameters apply to MZT, PZT.
3. Parameters apply to PLL, TMS, TDI (weakly pulled up).
4. Parameters apply to RST, TCK (weakly pulled down).
5. VOUT = VSS to VDDQ.
6. Parameters apply to CQ, CQ, DQ, DQINV, QVLD, TDO.
Units
V
V
V
V
Notes
2
1, 2
2
1, 2
Units
uA
uA
uA
uA
Notes
1, 2
1, 3
1, 4
5, 6
Rev: 1.09 5/2016
27/40
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2014, GSI Technology
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