GS8180QV18D Datasheet, PDF (16/32 Pages) GSI Technology – 18Mb Burst of 2 SigmaQuad SRAM

GS8180QV18/36D-200/167/133/100*
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
I_IL
Output Leakage Current
I_OL
Test Conditions
V_IN = 0 to V_DD
Output Disable,
V_OUT = 0 to V_DDQ
Min.
–2 uA
–2 uA
Max Notes
2 uA
2 uA
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
V_OH1
V_DDQ/2
Output Low Voltage
V_OL1
Vss
Output High Voltage
V_OH2
V_DDQ – 0.2
Output Low Voltage
V_OL2
Vss
Notes:
1. I_OH = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OH = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2. I_OL = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OL = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250Ω and V_DDQ = 1.5 V or 1.8 V
4. Minimum Impedance mode, ZQ = V_SS
5. I_OH = –1.0 mA
6. I_OL = 1.0 mA
Max.
V_DDQ
V_DDQ/2
V_DDQ
0.2
Units Notes
V
1, 3
V
2, 3
V
4, 5
V
4, 6
Rev: 2.03 10/2004
16/32
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology