GS8182D18D Datasheet, PDF (15/27 Pages) GSI Technology – 18Mb Burst of 4 SigmaQuad-II SRAM

Preliminary
GS8182D18D-250/200/167
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
V_OH1
V_DDQ/2
Output Low Voltage
V_OL1
Vss
Output High Voltage
V_OH2
V_DDQ – 0.2
Output Low Voltage
V_OL2
Vss
Notes:
1. I_OH = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OH = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2. I_OL = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OL = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250Ω and V_DDQ = 1.5 V or 1.8 V
4. Minimum Impedance mode, ZQ = V_SS
5. I_OH = –1.0 mA
6. I_OL = 1.0 mA
Max.
V_DDQ
V_DDQ/2
V_DDQ
0.2
Units Notes
V
1, 3
V
2, 3
V
4, 5
V
4, 6
Operating Currents
-250
-200
Parameter
Org
Symbol
0°C to –40°C to
70°C +85°C
0°C
to
70°C
–40°C
to
+85°C
IDD
TBD
TBD 460 mA TBD
Operating
Current
x18
IDDQ
TBD
TBD
95 mA
TBD
ISB1
TBD
Chip Disable
Current
x18
ISBQ1 TBD
Note:
Power measured with output pins floating.
TBD 130 mA TBD
TBD
5 mA
TBD
-167
0°C –40°C
to
to
70°C +85°C
400 mA TBD
85 mA
TBD
120 mA TBD
5 mA
TBD
Test Conditions
R and W ≤ V_IL Max.
tKHKH ≥ tKHKH Min.
All other inputs
V_IN ≤ V_IL Max. or V_IN ≥ V_IH Min.
R and W ≥ V_IH Min.
tKHKH ≥ tKHKH Min.
All other inputs
V_IN ≤ V_IL Max. or V_IN ≥ V_IH Min.
Rev: 1.02 11/2004
15/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology