GS8182D18D Datasheet, PDF (1/27 Pages) GSI Technology – 18Mb Burst of 4 SigmaQuad-II SRAM

Preliminary
GS8182D18D-250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
18Mb Burst of 4
SigmaQuad-II SRAM
250 MHz–167 MHz
1.8 V V_DD
1.8 V and 1.5 V I/O
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• Pin-compatible with future 36Mb, 72Mb, and 144Mb devices
SigmaRAM™ Family Overview
GS8182D18 are built in compliance with the SigmaQuad-II
SRAM pinout standard for Separate I/O synchronous SRAMs.
They are 18,874,368-bit (18Mb) SRAMs. These are the first in
a family of wide, very low voltage HSTL I/O SRAMs designed
to operate at the speeds needed to implement economical high
performance networking systems.
Clocking and Addressing Schemes
A Burst of 4 SigmaQuad-II SRAM is a synchronous device. It
employs two input register clock inputs, K and K. K and K are
independent single-ended clock inputs, not differential inputs
to a single differential clock input buffer. The device also
allows the user to manipulate the output register clock inputs
quasi independently with the C and C clock inputs. C and C are
Bottom View
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
JEDEC Std. MO-216, Variation CAB-1
also independent single-ended clock inputs, not differential
inputs. If the C clocks are tied high, the K clocks are routed
internally to fire the output registers instead.
Because Separate I/O Burst of 4 RAMs always transfer data in
four packets, A0 and A1 are internally set to 0 for the first read
or write transfer, and automatically incremented by 1 for the
next transfers. Because the LSBs are tied off internally, the
address field of a Burst of 4 RAM is always two address pins
less than the advertised index depth (e.g., the 1M x 18 has a
256K addressable index).
Parameter Synopsis
tKHKH
tKHQV
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.50 ns
Rev: 1.02 11/2004
1/27
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology