GS816018 Datasheet, PDF (14/28 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Preliminary
GS816018/32/36T-250/225/200/166/150/133
Recommended Operating Temperatures
Parameter
Symbol Min.
Typ.
Max.
Unit Notes
Ambient Temperature (Commercial Range Versions)
T_A
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
T_A
–40
25
85
°C
2
Note:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < V_DDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Undershoot Measurement and Timing
V_IH
V_SS
50%
V_SS – 2.0 V
20% tKC
Overshoot Measurement and Timing
V_DD + 2.0 V
50%
20% tKC
V_DD
V_IL
Capacitance
(T_A = 25^oC, f = 1 MHZ, V_DD = 2.5 V)
Parameter
Symbol
Input Capacitance
C_IN
Input/Output Capacitance
C_I/O
Note: These parameters are sample tested.
Test conditions
V_IN = 0 V
V_OUT = 0 V
Typ. Max. Unit
4
5
pF
6
7
pF
Package Thermal Characteristics
Rating
Layer Board Symbol
Max
Unit Notes
Junction to Ambient (at 200 lfm)
single
R_ΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
R_ΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
R_ΘJC
9
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 2.12 3/2002
14/28
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.