GS816018 Datasheet, PDF (12/28 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Preliminary
GS816018/32/36T-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
V_DDQ
V_CK
V_I/O
V_IN
I_IN
I_OUT
P_D
T_STG
T_BIAS
Voltage on V_DD Pins
Voltage in V_DDQ Pins
Voltage on Clock Input Pin
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
Temperature Under Bias
–0.5 to 4.6
V
–0.5 to 4.6
V
–0.5 to 6
V
–0.5 to V_DDQ +0.5 (≤ 4.6 V max.)
V
–0.5 to V_DD +0.5 (≤ 4.6 V max.)
V
+/–20
mA
+/–20
mA
1.5
W
–55 to 125
o_C
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Condi-
tions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Rev: 2.12 3/2002
12/28
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.