GS820E32AT Datasheet, PDF (13/21 Pages) GSI Technology – 64K x 32 2Mb Synchronous Burst SRAM

DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ Input Current
Mode Pin Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Symbol
I_IL
I_INZZ
I_INM
I_OL
V_OH
V_OH
V_OL
GS820E32AT-180/166/133/4/5
Test Conditions
V_IN = 0 to V_DD
V_DD ≥ V_IN ≥ V_IH
0V ≤ V_IN ≤ V_IH
V_DD ≥ V_IN ≥ V_IL
0V ≤ V_IN ≤ V_IL
Output Disable,
V_OUT = 0 to V_DD
I_OH = –mA, V_DDQ = 2.375 V
I_OH = –mA, V_DDQ = 3.135 V
I_OL = mA
Min
–1 uA
–1 uA
–1 uA
–300 uA
–1 uA
–1 uA
1.7 V
2.4 V
Max
1 uA
1 uA
300 uA
1 uA
1 uA
1 uA
0.4 V
Operating Currents
Parameter
Test Conditions
Operating
Current
Standby
Current
Deselect
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
ZZ ≥ VDD – 0.2 V
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
-180
-166
-133 (-4)
-5
Symbol
0 –40 0 –40 0 –40 0 –40 _Unit
to to to to to to to to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C
IDD
Pipeline
155 160 140 145 115 120 90 95 mA
IDD
Flow Through
100 105
90
95
80
85
65
70
mA
ISB
Flow Through
10
15
10
15
10
15
10
15
mA
IDD
Pipeline
35 40 30 35 30 35 25 30 mA
IDD
Flow Through
25
30
25
30
20
25
20
25
mA
Rev: 1.07 10/2004
13/21
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, GSI Technology