GS82582DT21 Datasheet, PDF(12/27 Page) GSI Technology – 288Mb SigmaQuad-II+ Burst of 4 SRAM

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GS82582DT21 Datasheet, PDF (12/27 Pages) GSI Technology – 288Mb SigmaQuad-II+ Burst of 4 SRAM

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GS82582DT21/39GE-675S/633S/550S

Capacitance

Parameter

Input Capacitance

Output Capacitance

Clock Capacitance

Note:

This parameter is sample tested.

Symbol

CIN

COUT

CCLK

Test conditions

VIN = 0 V

VOUT = 0 V

VIN = 0 V

(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)

Typ

Max

Units

AC Test Conditions

Parameter

Input high level

Input low level

Max. input slew rate

Input reference level

Output reference level

Note:

Test conditions as specified with output loading as shown unless otherwise noted.

Conditions

1.25 V

0.25 V

2 V/ns

0.75 V

VDDQ/2

AC Test Load Diagram

RQ = 250 ïï (HSTL I/O)

50ï

VREF = 0.75 V

VT = 0.75 V

Input and Output Leakage Characteristics

Parameter

Symbol

Test Conditions

Min

Max

Input Leakage Current

(except mode pins)

IIL

VIN = 0 to VDD

â2 uA

2 uA

Doff

IILDOFF

VIN = 0 to VDD

â20 uA

2 uA

ODT

IILODT

VIN = 0 to VDD

â20 uA

2 uA

Output Leakage Current

IOL

Output Disable,

VOUT = 0 to VDDQ

â2 uA

2 uA

Rev: 1.01 4/2016

12/27

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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