MB8508S064CE-100 Datasheet, PDF (9/20 Pages) Fujitsu Component Limited. – 8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM

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MB8508S064CE-100/-100L
s DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Notes 1, 2
Parameter
Operating Current
(Average Power
Supply Current)
Precharge Standby
Current (Power
Supply Current)
Active Standby
Current (Power
Supply Current)
Notes Symbol
Condition
Burst: Length = 1
tRC = min for BL = 1
tCK = min
*3
ICC1S
One Bank Active, Outputs Open
Addresses changed up to 1-time
during tCK (min.)
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
ICC2P
CKE = VIL, All Banks Idle
tCK = min, Power Down Mode
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
ICC2PS
CKE = VIL, All Banks Idle
CLK = H or L, Power Down Mode
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
*3
CKE = VIH, All Banks Idle, tCK = min
NOP commands only, Input signals
ICC2N
(except to CMD) are changed 1-time
during 3 clock cycles
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
ICC2NS
CKE = VIH, All Banks Idle
CLK = H or L, Input signal are stable
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
ICC3P
CKE = VIL, Any Bank Active
tCK = min.
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
ICC3PS
CKE = VIL, Any Bank Active
CLK = H or L
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
*3
CKE = VIH, Any Bank Active
tCK = min., NOP commands only, Input
ICC3N
signals (except to CMD) are changed
1-time during 3 clock cycles
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
ICC3NS
CKE = VIH, Any Bank Active
CLK = H or L
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
Value
Max.
Unit
Min.
Std. ver. Low ver.
—
680
mA
—
16
8 mA
—
8
4 mA
—
80
mA
—
16
mA
—
16
8 mA
—
8
4 mA
—
120
mA
—
16
mA
(Continued)
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