MB8508S064CE-100 Datasheet, PDF (10/20 Pages) Fujitsu Component Limited. – 8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM

MB8508S064CE-100/-100L
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(Continued)
Parameter
Notes Symbol
Condition
Burst Mode Current
(Average Power
Supply Current)
tCK = min, Burst Length = 4
Outputs Open, All Banks Active
*3 ICC4 Gapless Data
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
Auto-refresh Current
(Average Power
Supply Current)
Auto Refresh
tCK = min
*3 ICC5 tRC = min
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
Self-refresh Current
(Average Power
Supply Current)
Self-Refresh
tCK = min.
*3 ICC6 CKE ≤ 0.2 V
0 V ≤ VIN ≤ VIL (max.)
VIH (min.) ≤ VIN ≤ VCC
Input Leakage Current
(All Inputs)
II (L)
0 V ≤ VIN ≤ VCC
All other pins not under test = 0 V
Output Leakage Current
IO (L)
0 V ≤ VIN ≤ VCC
Output is disabled (Hi-Z)
Value
Max.
Unit
Min.
Std. ver. Low ver.
—
480
mA
—
1360
mA
—
8
4 mA
–30
30
µA
–5
5
µA
LVTTL Output
High Voltage
*4 VOH IOH = –2.0 mA
2.4
—
V
LVTTL Output
Low Voltage
*4 VOL IOL = +2.0 mA
—
0.4
V
Notes: *1. An initial pause (DESL on NOP) of 200 µs is required after power-on followed by a minimum of eight
Auto-refresh cycles.
*2. DC characteristics is the Serial PD standby state (VIN = VSS or VCC).
*3. ICC depends on the output termination, load conditions, clock cycle rate and signal clock rate.
The specified values are obtained with the output open and no termination register.
*4. Voltages referenced to VSS = VSSQ (= 0 V).
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