MB85R256H Datasheet, PDF (7/14 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit

MB85R256H
(2) Write cycle
Parameter
Write cycle time
CE active time
Write pulse width
Precharge time
Address setup time
Address hold time
Data setup time
Data hold time
Write set up time
Write hold time
(3) Power ON/OFF sequence
Parameter
CE LEVEL hold time at power OFF
CE LEVEL hold time at power ON
Power interval
Symbol
tWC
tCA
tWP
tPC
tAS
tAH
tDS
tDH
tWS
tWH
(within recommended operating conditions)
Value
Unit
Min
Max
150
⎯
70
2,000
70
2,000
80
⎯
0
⎯
ns
25
⎯
50
⎯
0
⎯
0
⎯
0
⎯
Symbol
tpd
tpu
tpi
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
80
⎯
⎯
ns
80
⎯
⎯
ns
1
⎯
⎯
s
3. Pin Capacitance
Parameter
Symbol
Conditions
Min
Input capacitance
CIN
VIN = VOUT = GND,
⎯
output capacitance
COUT ^{f = 1 MHz, TA = + 25 °C}
⎯
Value
Typ
⎯
⎯
Unit
Max
10
pF
10
pF
4. AC Characteristics Test Condition
Power supply voltage : 2.7 V to 3.6 V
Input voltage amplitude : 0.3 V to 2.7 V
Input rising time
: 10 ns
Input falling time
: 10 ns
Input evaluation level : 2.0 V/0.8 V
Output evaluation level : 2.0 V/0.8 V
Output load
: 100 pF
7