MB85R256H Datasheet, PDF (6/14 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit

MB85R256H
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Conditions
Value
Unit
Min
Typ
Max
Input leakage current | ILI | VIN = 0 V to VCC
⎯
⎯
10
µA
Output leakage
current
| ILO |
VOUT = 0 V to VCC,
CE = VIH or OE = VIH
⎯
⎯
10
µA
Operating power
supply current
CE = 0.2 V,
ICC Other Inputs = VCC − 0.2 V/0.2 V,
⎯
5
10
mA
tRC (Min), Ii/o = 0 mA
Standby current
ISB CE, WE, OE ≥ VCC
⎯
5
100
µA
High level output
voltage
VOH IOH = − 100 µA
0.8 × VCC
⎯
⎯
V
Low level output
voltage
VOL IOL = 1.0 mA
⎯
⎯
0.4
V
2. AC Characteristics
(1) Read cycle
Parameter
Read cycle time
CE active time
Read pulse width
Precharge time
Address setup time
Address hold time
CE access time
OE access time
CE output floating time
OE output floating time
Symbol
tRC
tCA
tRP
tPC
tAS
tAH
tCE
tOE
tHZ
tOHZ
(within recommended operating conditions)
Value
Unit
Min
Max
150
⎯
70
2,000
70
2,000
80
⎯
0
⎯
ns
25
⎯
⎯
70
⎯
70
⎯
25
⎯
25
6