MB85R256H Datasheet, PDF (1/14 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 256 K (32 K × 8) Bit

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256H
DS05-13106-1E
■ DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R256H is able to retain data without back-up battery.
The memory cells used for the MB85R256H has improved at least 10¹⁰ times of read/write access per bit,
significantly outperforming FLASH memory and E²PROM in durability.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 10¹⁰ times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 2.7 V to 3.6 V
• Operating temperature range: −40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
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