MB8508S064CF Datasheet, PDF (7/20 Pages) Fujitsu Component Limited. – 8 M X 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM

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MB8508S064CF-100/-100L
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter
Supply Voltage*
Input Voltage*
Output Voltage*
Storage Temperature
Power Dissipation
Output Current (D.C.)
* : Voltages referenced to VSS (= 0 V)
Symbol
VCC
VIN
VOUT
TSTG
PD
IOUT
Min.
–0.5
–0.5
–0.5
–55
—
–50
Value
Max.
+4.6
+4.6
+4.6
+125
8.0
+50
Unit
V
V
V
°C
W
mA
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
s RECOMMENDED OPERATING CONDITIONS
Parameter
Value
Notes Symbol
Unit
Min.
Typ.
Max.
Supply Voltage
VCC
3.0
3.3
3.6
V
*1
VSS
0
0
0
V
Input High Voltage, All Inputs
*1, 2
VIH
2.0
—
VCC +0.5
V
Input Low Voltage, All Inputs
Ambient Temperature
*1, 3
VIL
–0.5
—
0.8
V
TA
0
—
+70
°C
*1. Voltages referenced to VSS (= 0 V)
4.6 V
VIH
Pulse width ≤ 5 ns
VIH
VIHmin
50% of pulse amplitude
VIL
Pulse width ≤ 5 ns
*2. Overshoot limit: VIH (max)
= 4.6 V for pulse width <= 5 ns acceptable,
pulse width measured at 50% of pulse amplitude.
VILmax
VIL
50% of pulse amplitude
–1.5V
*3. Undershoot limit: VIL (min)
= VSS –1.5 V for pulse width <= 5 ns acceptable,
pulse width measured at 50% of pulse amplitude.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating conditionranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
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