MB84VD2228XEA Datasheet, PDF (59/63 Pages) Fujitsu Component Limited. – 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM

MB84VD2228XEA/EE/2229XEA/EE-90
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min.
—
Limits
Typ.
1
—
8
—
16
—
—
100,000
—
Max.
10
300
360
100
—
Unit
Comment
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Excludes system-level
overhead
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Parameter Description
VDH Data Retention Supply Voltage
IDDS2 Standby Current
tCDR Chip Deselect to Data Retention Mode Time
tR
Recovery Time
Note: tRC: Read cycle time
Min.
1.5
VDH = 3.0 V —
0
tRC
Typ.
—
TBD
—
—
Max.
3.3
TBD
—
—
Unit
V
µA
ns
ns
• CE1s Controlled Data Retention Mode (Note 1)
VCCs
2.7 V
DATA RETENTION MODE
VIH
VDH
CE1s
GND
See Note 2
tCDR
VCCS –0.2 V
See Note 2
tR
59